Volume 13 | Issue 2
Volume 13 | Issue 2
Volume 13 | Issue 2
Volume 13 | Issue 2
Volume 13 | Issue 2
Rear earth element Ce doped ZnSe thin films were deposited on the ITO substrate using simple electrochemical deposition method with different concentration of Ce3+ such as 3 and 5 mole % respectively. These electrochemically deposited thin films were characterized as a function of various doping concentration using UV–vis spectra, electrochemical impedance spectroscopy (EIS) and PL spectroscopy. The calculated average band gap energy is found to increase to compare the band gap of ZnSe (3.2eV), while using dopant concentration about 4 mole %, the band gap values is lower than the other samples.