FGT Ring Oscillators are non-volatile memory devices with a floating gate that can store charge, making them ideal for VCO applications. Ring oscillators, consisting of an odd number of inverters connected in a loop, have a frequency proportional to the delay through each inverter stage. However, achieving linearity in a ring oscillator can be challenging due to the inherent nonlinearity of transistors. The linearization model involves pre-conditioning the control voltage applied to the VCO to mitigate its nonlinearity. In this article, simulated an improvised approach to designing VCOs by utilizing Floating-Gate Transistors. Such non-traditional devices have special benefits including adjustable VCO threshold voltages and non-volatile memory attributes. Evidence for the potential for improved efficiency and adaptability of VCOs based on floating-gate transistors is presented in this paper.