This paper presents the design and analysis of a complementary metal-oxide-semiconductor (CMOS) two-stage operational amplifier utilizing advanced 45 nm technology. The op-amp, a fundamental building block in analog integrated circuits, plays a crucial role in numerous applications, including signal processing and amplification. The design process involves a comprehensive exploration of circuit parameters, trade-offs, and optimization techniques to meet the desired performance specifications. The work begins with a analytical description of the 45 nm technology node, highlighting its significance in the era of miniaturization and integration. The two-stage op-amp architecture is then introduced and analyzed, focusing on its potential advantages, such as enhanced gain, bandwidth, and stability. In the subsequent sections, the paper delves into the systematic design process, encompassing transistor sizing, biasing, and load selection. To achieve optimal performance, various design trade-offs are meticulously evaluated. Furthermore, advanced design methodologies, such as cascode configuration and compensation techniques, are explored to address issues related to bandwidth and stability. The simulation results, carried out using industry-standard tools, validate the effectiveness of the proposed design, demonstrating a high-gain, wide-bandwidth, and low-power op-amp. The study also discusses the impact of process variations on op-amp performance and highlights strategies for robustness and yield enhancement. This research provides valuable insights into the design of a CMOS two-stage op-amp in 45 nm technology, offering a foundation for further advancements in analog circuit design. The findings contribute to the ongoing effort to develop high performance analog integrated circuits for various applications, including wireless communication, sensor interfaces, and precision analog signal processing.